PART |
Description |
Maker |
GT15Q311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15 |
55 A, 1200 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
CT90AM-18 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V INSULATED GATE BIPOLAR TRANSISTOR
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
IRG4PSH71U IRG4PSH71UPBF |
99 A, 1200 V, N-CHANNEL IGBT INSULATED GATE BIPOLAR TRANSISTOR 1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package
|
IRF[International Rectifier]
|
IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 18A条一(c)|63AB INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度(VCES和\u003d 600V电压的Vce(on)典\u003d.4V,@和VGE \u003d 15V的,集成电路\u003d 18A条) INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A) 600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp. IRF[International Rectifier]
|
NGTG50N60FWG |
Insulated Gate Bipolar Transistor (IGBT)
|
ON Semiconductor
|
NGTG30N60FLWG |
Insulated Gate Bipolar Transistor (IGBT)
|
ON Semiconductor
|
NGTB50N60FWG |
Insulated Gate Bipolar Transistor (IGBT)
|
ON Semiconductor
|
IRGPC50KD2 IRGPC50KD2-EPBF |
52 A, 600 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 600V Copack IGBT in a TO-3P (TO-247AC) package
|
International Rectifier
|
GT10.DA120U |
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
|
Vishay Siliconix
|
IRG4BC40SPBF |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
|
IRF[International Rectifier]
|